Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2008-03-25
2008-03-25
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
C257S687000, C257S667000, C438S026000, C438S127000
Reexamination Certificate
active
10574017
ABSTRACT:
In an electronic component in which a semiconductor device such as a light emitting diode is encapsulated by an encapsulation resin and a manufacturing method of the same, formation of flash on occasion of filling a resin is prevented. The semiconductor device (SIC) is mounted in a reception concavity of a base member, and the encapsulation resin is filled into the reception concavity. After mounting the semiconductor device in the reception concavity and before filling the encapsulation resin into the reception concavity, a stopper resin layer is formed on a top face of the base member along a circumference of an aperture of the reception concavity by applying a resin. Since the circumference of the aperture of the reception concavity including electric conductive patterns and the base member is covered by the stopper resin layer, even when the encapsulation resin having low viscosity is filled into the reception concavity, leakage or proceeding due to capillarity of the encapsulation resin is prevented by the stopper resin layer. As a result, no flash of leaked encapsulation resin is formed.
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patent: 5904506 (1999-05-01), Yoneda et al.
patent: 6707166 (2004-03-01), Noguchi
patent: 6753196 (2004-06-01), Komoda et al.
patent: 2004/0012958 (2004-01-01), Hashimoto et al.
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English Language Abstract of JP 11-074420.
English Language Abstract of JP 2003-168829.
English Language Abstract of JP 2001-230347.
English Language Abstract of JP 2003-273292.
Abe Yutaka
Nakagawa Kazuya
Suzuki Toshiyuki
Greenblum & Berstein P.L.C.
Matsushita Electric & Works Ltd.
Patton Paul E
Smith Zandra V.
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