Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-25
2010-12-21
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S767000, C257S751000, C257S368000, C257SE21017, C257SE21582
Reexamination Certificate
active
07855458
ABSTRACT:
An electronic component includes a substrate, and a capacitor unit on the substrate. The capacitor unit has a laminate structure including a first electrode layer provided on the substrate, a second electrode layer opposed to the first electrode layer, and a dielectric layer disposed between the first and the second electrode layers. The first electrode layer has a multilayer structure including an adhesion metal layer joined to the dielectric layer. The adhesion metal layer is provided with an oxide coating on a side of the dielectric layer.
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Search Report corresponding to Chinese application No. 200610144641X dated Mar. 20, 2009.
Matsumoto Tsuyoshi
Mi Xiaoyu
Mizuno Yoshihiro
Okuda Hisao
Ueda Satoshi
Fujitsu Limited
Green Telly D
Kratz Quintos & Hanson, LLP
Smith Zandra
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