Electronic circuit using field effect transistor with compensati

Details Electronic circuit using field effect transistor with compensati Electronic circuit using field effect transistor with compensati

1975-09-11

1977-02-15

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307205, 307214, 307297, 307310, 331108R, H03K 3353, H03K 1714, H03K 1908, H03K 1940, 330

Patent

active

040084060

ABSTRACT:
A compensation circuit for electronic circuits such as pulse generator circuits which are suitable for MOSICS includes a resistor of high resistance and parallel-connected MOSFETs of the enhancement type and depletion type, respectively. The drain electrodes of the MOSFETs are connected to a power supply through the resistor, and are also connected to the gate electrode of load MOSFET of the depletion type which constitutes a load for a MOSFET of the enhancement type. To the gate of the former enhancement type MOSFET, a controlled bias voltage is applied from the connection point of MOSFETs connected in series between the power supply and ground. By employing the compensation circuit in pulse generator circuits, the instability of the oscillating periods due to changes in the ambient temperature and changes in the supply voltage is compensated. Also, the differences of oscillating periods are decreased among MOSICs.

REFERENCES:
patent: 3676700 (1972-07-01), Buchanan
patent: 3678407 (1972-07-01), Ahrons
patent: 3757145 (1973-09-01), Adam et al.
patent: 3806741 (1974-04-01), Smith
patent: 3831041 (1974-08-01), Krambeck et al.
patent: 3832644 (1974-08-01), Nagata et al.
patent: 3875430 (1975-04-01), Prak
Askin et al., "FET Device Parameters Compensation Circuit;" IBM Tech. Discl. Bull.; vol. 14, No. 7, pp. 2088-2089; 12/1971.

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