Electronic circuit using field effect transistor with compensati

Oscillators – Solid state active element oscillator – Transistors

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Details

331 57, 331176, H03K 333, H03K 3282

Patent

active

040152197

ABSTRACT:
In order to provide compensation for changes in the ambient temperature and supply voltage for an electronic circuit, such as a pulse generator circuit made up of MOSIC structure, a field effect transistor circuit includes a high value resistor and an enhancement and depletion type MOSFET, connected in parallel. The drain electrodes of the MOSFETs are connected to the power supply through the resistor and are also connected to the gate electrode of a depletion type load MOSFET which is the load transistor for an enhancement type MOSFET. When the compensating circuit is provided in a pulse generator circuit, instability in the oscillating frequency of the pulse generator due to changes in ambient temperature and supply voltage is overcome and the difference in the oscillating periods for the various MOSICs are decreased.

REFERENCES:
patent: 3931588 (1976-01-01), Gehweiler

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