Electronic circuit for measurement of transistor variability...

Details Electronic circuit for measurement of transistor variability... Electronic circuit for measurement of transistor variability...

2007-01-31

2008-10-21

Ha, Nguyen (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

07439755

ABSTRACT:
An electronic circuit includes an output terminal and at least a first measuring FET. The second drain-source terminals of a plurality of FETS to be tested are interconnected with the first drain-source terminal of the first measuring FET and the output terminal. The second drain-source terminal of the first measuring FET is interconnected with a first biasing terminal. The first drain-source terminals of the FETS to be tested are interconnected with a second biasing terminal. A state machine is coupled to the gates of the FETS to be tested and the gate of the first measuring FET. The state machine is configured to energize the gate of the first measuring FET and to sequentially energize the gates of the FETS to be tested, so that an output voltage appears on the output terminal. Circuitry to compare the output voltage to a reference value is also provided.

REFERENCES:
patent: 7038482 (2006-05-01), Bi
patent: 2005/0043908 (2005-02-01), Bhavnagarwala et al.
Mukhopadhyay, Saibal et al. 2007 IEEE International Solid-State Circuits Conference; ISSCC 2007/Session 22/Digital Circuit Innovations; “Statistical Characterization and On-Chip Measurement Methods for Local Random Variability of a Process Using Sense-Amplifier Based Test Structure”.
Terada, K. et al “A Test Circuit for Measuring MOSFET Threshold Voltage Mismatch.” Microelectronic Test Structures, 2003, International Conference, Mar. 2003, pp. 227-231.
Agarwal, K. et al. “A Test Structure for Characterizing Local Device Mismatches.” Proceeding of Symposium on VLSI Circuits, pp. 67-68, 2006.
Drego, N et al “A Test-Structure to Efficiently Study Threshold-Voltage Variation in Large MOSFET Arrays” Microsystems Technology Laboratories, MIT, Cambridge, MA, 2007.

Affiliated with

Also associated with

Rating

Electronic circuit for measurement of transistor variability... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electronic circuit for measurement of transistor variability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic circuit for measurement of transistor variability... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3991505