Electronic circuit for ion sensor with body effect reduction

Details Electronic circuit for ion sensor with body effect reduction Electronic circuit for ion sensor with body effect reduction

2008-05-06

2008-05-06

Nguyen, Vincent Q. (Department: 2858)

Electricity: measuring and testing

Using ionization effects

C324S450000, C702S025000

Reexamination Certificate

active

07368917

ABSTRACT:
An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.

REFERENCES:
patent: 4641249 (1987-02-01), Gion et al.
patent: 4701253 (1987-10-01), Ligtenberg et al.
patent: 6906524 (2005-06-01), Chung et al.
S. Casans et al.,ISFET drawbacks minimization using a novel electronic compensation, 2004, Sens. Actuators, B, Chem 99 p. 42-49, no month's available.
A. Morgenshtein et al, CMOS readout circuitry for ISFET microsystems, 2004, Sens. Actuators, B, Chem 97 p. 122-131, no month's available.
W. Y. Chung et al, ISFET interface circuit embedded with noise rejection capability, 2004, Electron. Lett., 40 (18) p. 1115-1116, Sep. 2004.
A. Morgenshtein etal, Wheatstone-bridge readout interface for ISFET/REFET applications, 2004 Sens. Actuators, B, Chem 98 p. 18-27, no month's available.
S. Casans et al, Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency, 2003, Sens. Actuators, B, Chem 91 p. 11-16, no month's available.
S. Casans et al, Novel constant current driver for ISFET/MEMFETs characteristization, 2001, Sens. Actuators, B, Chem 76 p. 629-633, no month's available.
Y. L. Chin et al, A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process, 2001, Sens. Actuators, B, Chem 76 p. 582-593, no month's available.
B. Palan et al, New ISFET sensor interface circuit for biomedical applications, 1999, Sens. Actuators, B, Chem 57 p. 63-68, Jan. 1999.
L. Ravczzi, P. Conci, ISFET sensor coupled with CMOS read-out circuit microsystem, Electron. Lett., 34 (1998) 2234-2235, no month's available.
P. Berveld, Future applications of ISFETs, 1991, Sens. Actuators, B, Chem 4 p. 125-133, no month.
G.-H. Wang et al, ISFET temperature characteristics, 1987, Sens. Actuators,B, Chem 11 p. 221-237, no month.
T. Matsuo et al, Methods of ISFET fabrication, 1981, Sens. Actuators, B, Chem 1 p. 77-96, no month.
P. Bergveld, Development of an ion sensitive solid-state device for neurophysiological measurements, 1970, IEEE Trans. Biomed. Eng., January p. 70-71.

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