Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-10-18
1999-11-23
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257773, 257774, 257758, 257760, 257381, 257382, 257637, H01L 2976, H01L 2348, H01L 2352
Patent
active
059905557
ABSTRACT:
An electronic circuit having: a substrate with an upper surface; a lower level wiring made of conductive material and disposed on the substrate; an insulating cover film covering the surface of the lower level wiring; an interlayer insulating film formed on the substrate, covering the insulating cover film; an opening formed through the interlayer insulating film and the insulating cover film at an interlayer contact region extending from an area corresponding to the inside region, as viewed in the in-plane layout of the substrate, of the lower level wiring to an area corresponding to the outside region of the lower level wiring; and a higher level wiring disposed on a partial region of the interlayer insulating film and in the interlayer contact region, the higher level wiring being electrically connected to the lower level wiring in the interlayer contact region. The connection reliability between a lower level wiring layer and a higher level wiring layer in the connection region can be improved while maintaining the insulation reliability therebetween in the insulation region.
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Hori Tetsurou
Ohori Tatsuya
Clark Jhihan B.
Fujitsu Limited
Saadat Mahshid
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