Electrical resistors – With base extending along resistance element – Resistance element coated on base
Patent
1991-04-24
1993-06-08
Lateef, Marvin M.
Electrical resistors
With base extending along resistance element
Resistance element coated on base
338225, 338223, 20419221, H01C 1012
Patent
active
052183351
ABSTRACT:
In an electronic circuit device, a thin film resistor is formed on a substrate and includes first regions including one kind of atom such as Cr and exhibiting an electric conductivity and a second region including a compound such as SiO.sub.2 composed of two kinds of atoms and exhibiting an insulating property. In the thin film resistor, the first regions are scattered in the second region and have an average particle size of 2 nm to 20 nm.
REFERENCES:
patent: 4010312 (1977-03-01), Pinch et al.
patent: 4343986 (1992-08-01), Mitani et al.
patent: 4460494 (1984-07-01), Abe et al.
patent: 4749981 (1988-07-01), Yui et al.
patent: 5068756 (1991-11-01), Morris et al.
S. M. Ojha, Thin Solid Films 57(1979) 363-366.
J. F. Henrickson, et al., Journal of Applied Physics, vol. 40, No. 13, Dec. 1969 pp. 5006-5014.
W. M. Paulson, et al., J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977, pp. 210-218.
Phys. B11 (1975) pp. 2795-2811, Lee, et al. "Theory of the Extended X-ray Absorption Fine Structure".
Physical Society of Japan, vol. 34, No. 7, (1979), pp. 589-598.
DE-Z: "radiomentor" 11 (1968) S. 786 bis 789.
DE-Z: "industrie elektrik & elektronik" 16. Jahrgang (1971) No. 17 S. 435 bis 438.
Kohno Makiko
Nakano Asao
Narizuka Yasunori
Ogata Kiyoshi
Hitachi , Ltd.
Lateef Marvin M.
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