Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-10-23
2010-12-21
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S678000, C257SE29001, C257SE21505, C257SE23062
Reexamination Certificate
active
07855429
ABSTRACT:
An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.
REFERENCES:
patent: 2006/0076661 (2006-04-01), Savastiouk et al.
Ishida Makoto
Sawada Kazuaki
Sudo Minoru
Takao Hidekuni
Adams & Wilks
Ishida Makoto
Mandala Victor A
Moore Whitney
Seiko Instruments Inc.
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