Electronic circuit device having silicon substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S678000, C257SE29001, C257SE21505, C257SE23062

Reexamination Certificate

active

07855429

ABSTRACT:
An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.

REFERENCES:
patent: 2006/0076661 (2006-04-01), Savastiouk et al.

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