Electronic circuit device capable for use as a memory device

Details Electronic circuit device capable for use as a memory device Electronic circuit device capable for use as a memory device

1995-02-03

1999-11-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257104, 257529, H01L 2900, H01L 2904, H01L 29861

Patent

active

059947578

ABSTRACT:
An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high resistivity state to a low resistivity state in accordance with a voltage applied between the first and second conductors.

REFERENCES:
patent: 4922319 (1990-05-01), Fukushima
patent: 5233206 (1993-08-01), Lee et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5331197 (1994-07-01), Miyawaki et al.
patent: 5521423 (1996-05-01), Shinriki et al.
Gordon et al., "Conducting Filament of the Programmed Metal Electrode Amorphous Silicon Antifuse," IEDM '93, Dec. 5, 1993, pp. 27-30.

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