Electronic circuit

Details Electronic circuit Electronic circuit

1998-03-13

2000-02-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257383, 257408, 257751, 257763, H01L 2348, H01L 2352, H01L 2940

Patent

active

060312904

ABSTRACT:
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

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