Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-07-31
2008-10-07
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S103000, C257S678000, C257S713000, C257SE21222, C257SE21568, C257SE23111
Reexamination Certificate
active
07432532
ABSTRACT:
Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.
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Agraharam Sairam
Chrysler Gregory M.
Garner Michael C.
Ravi Kramadhati V
Watwe Abhay A.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nhu David
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