Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2001-07-31
2004-08-03
Cuneo, Kamand (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
Reexamination Certificate
active
06770966
ABSTRACT:
BACKGROUND OF THE INVENTION
1). Field of the Invention
This invention relates to a method of manufacturing a combination wafer, dice from the wafer, and an electronic assembly including such a die, wherein the die has a layer of diamond for purposes of conducting heat.
2). Discussion of Related Art
Integrated circuits are usually formed on silicon wafers which are subsequently sawed into individual dice. Each die then has a portion of the silicon wafer with a respective integrated circuit formed thereon. Electronic signals can be provided to and from the integrated circuit. Operation of the integrated circuit causes heating thereof and an increase of temperature of the integrated circuit may cause its destruction. The temperature of all points on the integrated circuit should thus be maintained below a certain maximum temperature. Operation of the integrated circuit is not uniform so that certain points on the integrated circuit generate more heat than others, thus creating “hot spots”. Without the hot spots, it may be possible to increase the average power dissipation of the die while maintaining a desired temperature of the integrated circuit, thus allowing it to operate at a higher frequency.
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Wolf, Stanley et al. Silicon Processing for the VLSI Era—vol 1, 1986, pp. 1-8.*
Liu et al., “Diamond Chemical Vapor Deposition: Nucleation and Early Growth Stages”, 1995, pp. 1-7.
Agraharam Sairam
Chrysler Gregory M.
Garner Michael C.
Ravi Kramadhati V.
Watwe Abhay A.
Blakely , Sokoloff, Taylor & Zafman LLP
Cuneo Kamand
Geyer Scott B.
Intel Corporation
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