Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-06-21
2005-06-21
Baumeister, B. William (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S734000, C257S780000, C257S738000, C257S758000, C257S783000, C257S778000, C257S779000, C438S108000, C438S612000, C438S613000, C438S107000, C438S106000, C324S755090, C324S765010, C324S701000, C324S754090
Reexamination Certificate
active
06909194
ABSTRACT:
A semiconductor component includes a substrate, bonding pads on the substrate, and external contacts bonded to the bonding pads. Exemplary external contacts include solder balls, solder bumps, solder columns, TAB bumps and stud bumps. Preferably the external contacts are arranged in a dense array, such as a ball grid array (BGA), or fine ball grid array (FBGA). The component also includes a polymer support member configured to strengthen the external contacts, absorb forces applied to the external contacts, and prevent separation of the external contacts from the bonding pads. In a first embodiment, the polymer support member comprises a cured polymer layer on the substrate, which encompasses the base portions of the external contacts. In a second embodiment, the polymer support member comprises support rings which encompass the base portions of the external contacts. In either embodiment the polymer support member transfers forces applied to the external contacts away from the interface with the bonding pads, and into the center of the contacts.
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Farnworth Warren M.
Wood Alan G.
Baumeister B. William
Gratton Stephen A.
Micro)n Technology, Inc.
Yevsikov Victor V.
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