Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-03-29
2005-03-29
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S717000, C257SE23106, C361S707000, C361S709000
Reexamination Certificate
active
06873043
ABSTRACT:
An electronic assembly equipped with a heat-conductive structure, and to a method of conducting heat from a circuit device within such an assembly. The heat-conductive structure comprises an interconnect layer, a contact layer, and an electrically insulating layer between the interconnect and contact layers. The interconnect layer contacts circuit elements on the topside of the device, and comprises extensions that contact conductors on the substrate to which the device is attached. The interconnect and contact layers are both formed of thermally and electrically conductive materials, such that the heat-conductive structure electrically interconnects the topside of the device with the substrate and thermally interconnects the topside with a heat sink placed in contact with the contact layer. Because of the presence of the insulating layer, the heat sink does not interfere with the electrical connections provided by the interconnect layer.
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Christopher Schaeffer, “High Power MCM Package,” U.S. Appl. No. 60/396,342 filed on Jul. 15, 2002.*
U.S. Appl. No. 60/396,342.
Chmielewski Stefan V.
Smoot Stephen W.
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