Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including adhesive bonding step
Reexamination Certificate
2006-08-15
2006-08-15
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Including adhesive bonding step
C438S106000, C438S119000, C438S121000, C438S122000, C438S612000, C438S613000
Reexamination Certificate
active
07091063
ABSTRACT:
To accommodate high power densities associated with high performance integrated circuits, heat is dissipated from a surface of a die through a solderable thermal interface to a lid or integrated heat spreader. In one embodiment, the die is mounted on an organic substrate using a C4 and land grid array arrangement. In order to maximize thermal dissipation from the die while minimizing warpage of the package when subjected to heat, due to the difference in thermal coefficients of expansion between the die and the organic substrate, a thermal interface is used that has a relatively low melting point in addition to a relatively high thermal conductivity. Methods of fabrication, as well as application of the package to an electronic assembly, an electronic system, and a data processing system, are also described.
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Sur Biswajit
Vodrahalli Nagesh
Workman Thomas
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