Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2008-01-29
2008-01-29
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S106000, C438S612000, C438S613000, C257S737000, C257S738000, C257S777000, C257S778000
Reexamination Certificate
active
07323360
ABSTRACT:
High yield, high reliability, flip-chip integrated circuit (IC) packages are achieved utilizing a combination of heat and pressure to bond flip-chip die and to cure no-flow underfill material. The underfill comprises a filler or low coefficient of thermal expansion (CTE) material to decrease CTE of the cured underfill. The filler material can be selected from the group comprising silica, silicon oxide, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or a mixture thereof. The filler material may also increase the viscosity of the uncured underfill and/or increase the modulus of elasticity of the cured underfill. In some method embodiments, a thermocompression bonder is used to simultaneously provide solder bump reflow and underfill curing. Application of various methods to a component package, an electronic assembly, and an electronic system are also described.
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Djukic Milan
Gonzalez Carlos A.
Shi Song-Hua
Intel Corporation
Lebentritt Michael
Mitchell James M
Schwegman Lundberg & Woessner, P.A.
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