Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-26
2006-09-26
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000, C257S344000, C257S347000, C257S408000
Reexamination Certificate
active
07112817
ABSTRACT:
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
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Arao Tatsuya
Koyama Jun
Ono Koji
Suzawa Hideomi
Yamazaki Shunpei
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Thien F.
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