Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1993-04-14
1994-06-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257705, 257707, 257720, H01L 2302, H01L 3902
Patent
active
053249879
ABSTRACT:
Differences in thermal expansion properties between integrated circuit chips, especially of gallium arsenide, and the dielectric substrates (especially diamond and aluminum nitride) on which said chips are mounted are accommodated by interposing between the substrate and the chip a base having diamond pedestals in combination with a material of higher coefficient of thermal expansion than the substrate, typically a metal such as copper or tungsten. The base may be integral with a diamond substrate or may be a shim interposed between the substrate and the chip.
REFERENCES:
patent: 3675089 (1972-07-01), Hantusch et al.
patent: 4256792 (1981-03-01), Koepke et al.
patent: 4460916 (1984-07-01), Hashimoto et al.
patent: 5113315 (1992-05-01), Capp et al.
Burgess James F.
Fillion Raymond A.
Iacovangelo Charles D.
General Electric Company
Pittman William H.
Prenty Mark V.
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