Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257S072000, C257S075000, C349S043000
Reexamination Certificate
active
06888162
ABSTRACT:
An electronic apparatus employs a polycrystalline semiconductor thin film structure formed of an insulating substrate and a plurality of polycrystalline layers laminated on the insulating substrate. A plurality of transistors are formed at the surface of the polycrystalline semiconductor thin film structure, each transistor being formed in a region of one of a plurality of crystal grains disseminated on the surface of the polycrystalline layers. A number of crystal grains in each of the polycrystalline layers is gradually reduced from a lower layer to an upper layer.
REFERENCES:
patent: 6274888 (2001-08-01), Suzuki et al.
patent: 08-031749 (1996-02-01), None
patent: 08-316485 (1996-11-01), None
patent: 09-027452 (1997-01-01), None
patent: 10-055960 (1998-02-01), None
patent: 10-097993 (1998-04-01), None
patent: 10-291897 (1998-11-01), None
Miyao Masanobu
Nakagawa Kiyokazu
Sugii Nobuyuki
Yamaguchi Shin'ya
Mattingly Stanger & Malur, P.C.
Tran Minh-Loan
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