Electronic and optoelectric devices utilizing light hole propert

Details Electronic and optoelectric devices utilizing light hole propert Electronic and optoelectric devices utilizing light hole propert

1989-05-31

1990-02-06

Mintel, William

357 16, 357 15, 357 4, 357 42, H01L 2980

Patent

active

048992011

ABSTRACT:
Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-type semiconductor wires; square well two-dimensional p-channel FETs; and laser diodes and light emitting diodes which use one dimensional p-type semiconductor wires.

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