Electronic and optical devices and methods of forming these...

Wave transmission lines and networks – Coupling networks – Nonreciprocal gyromagnetic type

Reexamination Certificate

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C333S161000, C333S0990MP, C333S205000

Reexamination Certificate

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07145412

ABSTRACT:
Electronic and optical (or photonic) devices with variable or switchable properties and methods used to form these devices, are disclosed. More specifically, the present invention involves forming layers of conductive material and dielectric material or materials with varying conductivity and indexes of refraction to form various electronic and optical devices. One such layer of adjustable material is formed by depositing epitaxial or reduced grain boundary barium strontium titanate on the C-plane of sapphire.

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patent: 5852688 (1998-12-01), Brinkman et al.
patent: 5965494 (1999-10-01), Terashima et al.
patent: 6097263 (2000-08-01), Mueller et al.
Ashok V. Rao, Said a Mansour, Arden L. Bement, Jr., “Fabrication of feroelectic PZT thin film capacitors with Indium Tin Oxide (ITO) electrodes”, Materials Letters 29 (1966) (cont.) 255-258.
Wen-Yi Lin et al., “Thin Film Dielectrics from Electronics Using Combustion Chemical Vapor Deposition”, Mat. Res. Soc. Symp. Proc. vol. 574 (cont.)1999 Materials Research Society, 371-376.

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