Electron wave interference devices, methods for modulating an in

Details Electron wave interference devices, methods for modulating an in Electron wave interference devices, methods for modulating an in

1994-03-10

1994-12-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257184, 257280, 257425, 257449, H01L 2714, H01L 3100

Patent

active

053713885

ABSTRACT:
An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.

REFERENCES:
patent: 4734750 (1988-03-01), Okamura et al.
patent: 4962410 (1990-10-01), Kriman et al.
patent: 4996570 (1991-02-01), Van Houten et al.
patent: 5051791 (1991-09-01), Baldwin et al.
Patent Abstracts of Japan, vol. 013, No. 378 (E-809) Aug. 22, 1989, and JP-A-11 29 477 (Mitsubishi Electric), May. 22, 1989.
Superlattices and Microstructures, vol. 4, No. 4/5, 1988, pp. 541-544, C. J. B. Ford et al., "Transport In GaAs Heterojunction Ring Structures."
Datta et al., Proposed Structure For Large Quantum Interference Effects, Appl. Phys. Lett., vol. 48 No. 7, Feb. 1986, pp. 487-489.

Affiliated with

Also associated with

Rating

Electron wave interference devices, methods for modulating an in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron wave interference devices, methods for modulating an in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron wave interference devices, methods for modulating an in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-216686