Electron wave deflection in modulation doped and other doped sem

Details Electron wave deflection in modulation doped and other doped sem Electron wave deflection in modulation doped and other doped sem

1991-05-24

1992-07-21

Mintel, William

357 68, 357 22, 357 16, 357 15, H01L 2714

Patent

active

051327600

ABSTRACT:
The present invention relates to semiconductor devices which incorporate doped semiconductor elements or modulation doped devices wherein ballistic electrons in these elements or in a two-dimensional electron gas (2-DEG) are deflected by shaped potential barriers. A shaped potential barrier is formed by depositing a shaped electrode on the surface of the device and applying a potential to it. The electrode may take the shape of a biconcave lens which induces a potential barrier of that shape in the underlying device. Upon transiting the potential barrier induced by the shaped electrode, the phases of the exiting electrons are different across the width of the electrode and the beam of electrons is focused. By changing the applied potential, the focal point of the exiting electrons may be moved in a direction parallel to the axis of the lens-like electrode. Other electrode configurations such as a biconvex shape will cause incident electrons to diverge from their original paths. In another embodiment, a triangular electrode, depending on the potentials applied to it, reflects, transmits or deflects incident electron waves.

REFERENCES:
patent: 3319082 (1967-05-01), Touchy
patent: 3501681 (1970-03-01), Weir
patent: 3593071 (1971-07-01), Janning
patent: 4529999 (1985-07-01), Bender et al.
patent: 4546453 (1985-10-01), Noufer
patent: 4550330 (1985-10-01), Fowler
IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1989, pp. 150-152, "Heterostructure Traveling Wave Transistor", F. F. Fang et al.

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