Electron-wave coupled semiconductor switching device

Details Electron-wave coupled semiconductor switching device Electron-wave coupled semiconductor switching device

1991-01-22

1992-09-15

Mintel, William

Optical: systems and elements

Prism

With reflecting surface

357 4, 357 68, 359248, 359254, 359248, 333248, 333239, H01L 29161

Patent

active

051482428

ABSTRACT:
An electron-wave coupled semiconductor device, in particular a semiconductor switching device, comprises a first layer of semiconducting material having a first bandgap, and a second layer of material formed on said first semiconducting layer and having a second bandgap greater than the first said bandgap. First and second electron waveguides are formed alongside but spaced apart from each other in the first semiconductor layer adjacent the boundary between this layer and said second layer. A gate region extends over said second layer transverse to and over said electron waveguides. First contact means provides input connections to said first and second electron waveguides on one side of said gate region and further contact means provides separate output connections from said first and second electron waveguides on the opposite side of the gate region from said first contact means. The dimension of the electron waveguides under said gate region, both along and transverse to said electron waveguides, and also the dimension between said electron waveguides are smaller than the elastic mean free path for electrons at the operating temperature of the device. A signal applied to the gate region can be used to switch a signal applied to said input contact means selectively to a selected one of the output connections.

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