Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium
Patent
1995-03-21
1997-05-13
Epps, Georgia Y.
Dynamic information storage or retrieval
Specific detail of information handling portion of system
Electrical modification or sensing of storage medium
369120, 365158, 360113, 257421, G11B 900, G11C 1115, H01L 2722
Patent
active
056299222
ABSTRACT:
Ferromagnetic/insulator/ferromagnetic tunneling has been shown to give over 10% change in the junction resistance with H less than 100 Oe, at room temperature but decreases at high dc-bias across the junction. Using such junctions as magnetic sensors or memory elements would have several advantages; it is a trilayer device and does not strongly depend on the thickness of FM electrodes or the tunnel barrier; submicron size is possible with high junction resistance and low power dissipation. The magnitude of the effect is consistent with the simple model of spin-polarized tunneling between ferromagnets.
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Kinder Lisa
Meservey Robert H.
Moodera Jagadeesh S.
Wong Terrilyn
Chu Kim-Kwok
Epps Georgia Y.
Massachusetts Institute of Technology
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