Electron tube with electron-bombarded semiconductor device

Details Electron tube with electron-bombarded semiconductor device Electron tube with electron-bombarded semiconductor device

2004-09-09

2009-02-03

Guharay, Karabi (Department: 2889)

Electric lamp and discharge devices

Photosensitive

Photocathode

C313S1030CM, C313S527000, C313S532000, C313S544000

Reexamination Certificate

active

07486021

ABSTRACT:
A photocathode is formed on a predetermined portion of the internal surface of an envelope of an electric tube. An avalanche photodiode (APD) is provided inside the envelope. The APD is surrounded by a cover and a tubular inner wall. A manganese bead and an antimony bead serving as evaporation sources are disposed in the vicinity outside the inner wall. The manganese bead and the antimony bead are surrounded by a tubular outer wall. The manganese bead and the antimony bead generate metal vapor to thereby form the photocathode. In forming the photocathode, the cover, inner wall, outer wall prevent the metal vapor from being deposited on the APD or an unintended portion inside the electron tube.

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