Electron tube having a semiconductor cathode with lower and high

Details Electron tube having a semiconductor cathode with lower and high Electron tube having a semiconductor cathode with lower and high

1998-02-12

1999-03-09

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 257 77, 313366, H01L 2912

Patent

active

058804811

ABSTRACT:
A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-emission efficiency are indicated.

REFERENCES:
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4506284 (1985-03-01), Shannon
patent: 4516146 (1985-05-01), Shannon et al.
patent: 4616248 (1986-10-01), Khan et al.
patent: 4801994 (1989-01-01), Van Gorkom et al.
patent: 5243197 (1993-09-01), Van Gorkom et al.

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