Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1996-11-04
1998-12-15
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257488, 257491, 313446, 313495, H01J 2904
Patent
active
058500871
ABSTRACT:
By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).
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Fox John C.
Monin, Jr. Donald L.
U.S. Philips Corporation
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