Electron tube comprising a semiconductor cathode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

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257488, 257491, 313446, 313495, H01J 2904

Patent

active

058500871

ABSTRACT:
By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).

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patent: 4574216 (1986-03-01), Hoeberechts et al.
patent: 4682074 (1987-07-01), Hoeberechts et al.
patent: 4801994 (1989-01-01), Van Gorkom et al.
patent: 5285079 (1994-02-01), Tsukamoto et al.
patent: 5315207 (1994-05-01), Hoeberechts et al.

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