Electron source, and charged-particle apparatus comprising...

Radiant energy – Ion generation – Field ionization type

Reexamination Certificate

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C250S311000

Reexamination Certificate

active

11233488

ABSTRACT:
The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). The semiconductor material may, for example, comprise a semiconductor nanowire including InAs and GaInAs.

REFERENCES:
patent: 3699404 (1972-10-01), Simon et al.
patent: 3872489 (1975-03-01), Hagenlocher
X. Duan; Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices; Nature (2001); vol. 409; pp. 66-69.
Yenilmez et al.; “Wafer Scale Production of Carbon Nanotubes Scanning Probe Tips for Atomic Force Microscopy”; Applied Physics Letters (2002); vol. 80, No. 12: pp. 2225-2227.

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