Electron lithography mask manufacture

Details Electron lithography mask manufacture Electron lithography mask manufacture

1986-03-13

1987-03-24

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504411, 2504421, H01J 37317

Patent

active

046527621

ABSTRACT:
A layer of electron-sensitive resist on a semiconductor substrate is exposed to a patterned electron beam emitted from an erasable photocathode mask in an electron image projector. The mask is formed from a transparent plate, such as quartz, on which a layer of cesium iodide or other photoemissive material is provided. A photoemissive pattern is defined in this layer by selective direct exposure to a beam of photons, electrons, or ions, preferably in an evacuated environment containing carbon whereby the photoemission of the exposed areas of the layer is lowered. Alternatively, using a beam of charged particles with a relatively high current density, the exposed parts of the layer are actually removed by evaporation. In either case, the patterned layer can be removed by rinsing in water and the transparent plate can be reused with the same or different photoemissive pattern.

REFERENCES:
patent: 4467210 (1984-08-01), Sugihara et al.
patent: 4508968 (1985-04-01), Kobayashi et al.

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