Electron lithography apparatus

Details Electron lithography apparatus Electron lithography apparatus

1985-05-06

1987-09-22

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2505051, H01J 3700, H01J 3730

Patent

active

046957324

ABSTRACT:
An electron image projector for transferring mask patterns onto a semiconductor wafer comprises a patterned photoemissive cathode mask (4) and a target (3) formed by the semiconductor wafer (11) coated with an electron sensitive resist (10). Accelerated by a uniform electric field E and focussed by a uniform magnetic field H a patterned electron beam is projected from the cathode onto the target with unity magnification. The electric field E is established between the cathode and an electron permeable anode grid (2) situated between the cathode and the target. The anode grid comprises a plurality of mutually parallel slats (21,31) spaced apart by elongate electron permeable regions (22,32). The grid may be formed for example by an apertured silicon wafer (see FIG. 2) or conductive sheet, or by metal wires stretched across a metal annulus (see FIG. 3).

REFERENCES:
patent: 3843916 (1974-10-01), Trotel et al.
patent: 4112307 (1978-09-01), Foll et al.
patent: 4370556 (1983-01-01), Stengl et al.
patent: 4550258 (1985-10-01), Omata
patent: 4554458 (1985-11-01), Behringer et al.

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