Electron irradiation process of glass passivated semiconductor d

Details Electron irradiation process of glass passivated semiconductor d Electron irradiation process of glass passivated semiconductor d

1977-08-01

1980-05-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 29, 357 72, 357 91, 427 35, H01L 754, H01L 21263

Patent

active

042015987

ABSTRACT:
Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.

REFERENCES:
patent: 3505571 (1970-04-01), Volder
patent: 3674520 (1972-07-01), Suzuki et al.
patent: 3752701 (1973-08-01), Morrissey
patent: 3837002 (1974-09-01), Sakamoto et al.
patent: 3881964 (1975-05-01), Cresswell et al.
patent: 3933527 (1976-01-01), Tarneja et al.
patent: 3996602 (1976-12-01), Goldberg et al.

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