Electron injection method for substrate-hot-electron program and

Details Electron injection method for substrate-hot-electron program and Electron injection method for substrate-hot-electron program and

1999-03-24

2000-07-18

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518528, G11C 1600

Patent

active

060916354

ABSTRACT:
A new method for injecting electrons from a forward biased deep n-well to p-well junction underneath the channel area of a triple-well ETOX cell during substrate hot electron (SHE) programming. The ETOX cell has a control gate, a floating gate, a deep n-well formed in the substrate, a p-well formed in the n-well, a drain implant formed in the p-well, and a source implant formed in the p-well. The method comprises the steps of: forward biasing the deep n-well relative to the p-well; positively biasing the control gate by a voltage sufficient to invert the channel between the source implant and the drain implant; and positively biasing the source and drain. The SHE programming has at least 100 times higher efficiency than channel hot electron (CHE). The cell threshold voltage (V.sub.T) saturates to a value in a self-convergent manner. The SHE can also be used for tightening the Vt spread by a re-programming technique after erase.

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