Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-03-05
2010-02-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S102000, C257SE33013
Reexamination Certificate
active
07659556
ABSTRACT:
In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones,where each of X1and X2represents:(where each of R1to R8represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group).
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Ngo Ngan
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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