Etching a substrate: processes – Forming or treating electrical conductor article – Repairing circuit
Reexamination Certificate
2006-07-10
2010-10-05
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Forming or treating electrical conductor article
Repairing circuit
C216S013000, C216S066000
Reexamination Certificate
active
07807062
ABSTRACT:
A method of imaging and repairing defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
REFERENCES:
patent: 4260649 (1981-04-01), Dension et al.
patent: 4543486 (1985-09-01), Rose
patent: 4579750 (1986-04-01), Bowen et al.
patent: 4581248 (1986-04-01), Roche
patent: 4624736 (1986-11-01), Gee et al.
patent: 4655849 (1987-04-01), Schachameyer et al.
patent: 4668304 (1987-05-01), Schachameyer et al.
patent: 4670063 (1987-06-01), Schachameyer et al.
patent: 4670064 (1987-06-01), Schachameyer et al.
patent: 4685976 (1987-08-01), Schachameyer et al.
patent: 4694777 (1987-09-01), Roche
patent: 4832781 (1989-05-01), Mears
patent: 4933206 (1990-06-01), Cox
patent: 4938996 (1990-07-01), Ziv et al.
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4980198 (1990-12-01), Dowben et al.
patent: 5032435 (1991-07-01), Biefeld et al.
patent: 5047649 (1991-09-01), Hodgson et al.
patent: 5102830 (1992-04-01), Sandhu
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5155053 (1992-10-01), Atkinson
patent: 5164222 (1992-11-01), Gottsleben et al.
patent: 5326981 (1994-07-01), Hara et al.
patent: 5387443 (1995-02-01), Ota et al.
patent: 5403433 (1995-04-01), Morrison et al.
patent: 5429730 (1995-07-01), Nakamura et al.
patent: 5438019 (1995-08-01), Sandhu
patent: 5472935 (1995-12-01), Yandrofski et al.
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5622567 (1997-04-01), Kojima et al.
patent: 5639342 (1997-06-01), Chen et al.
patent: 5641545 (1997-06-01), Sandhu
patent: 5648114 (1997-07-01), Paz De Araujo et al.
patent: 5682041 (1997-10-01), Kawakubo et al.
patent: 5733609 (1998-03-01), Wang
patent: 5754297 (1998-05-01), Nulman
patent: 5759923 (1998-06-01), McMillan et al.
patent: 5800617 (1998-09-01), Sandhu
patent: 5807650 (1998-09-01), Komano et al.
patent: 5825035 (1998-10-01), Mizumura et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 5942854 (1999-08-01), Ryoji et al.
patent: 5976328 (1999-11-01), Azuma et al.
patent: 5985693 (1999-11-01), Leedy
patent: 5989928 (1999-11-01), Nakata et al.
patent: 6051287 (2000-04-01), Marsh
patent: 6064800 (2000-05-01), Sandhu
patent: 6091071 (2000-07-01), Franz et al.
patent: 6113751 (2000-09-01), Morgenthaler
patent: 6143085 (2000-11-01), Marsh
patent: 6177147 (2001-01-01), Samukawa et al.
patent: 6187492 (2001-02-01), Ri et al.
patent: 6194325 (2001-02-01), Yang et al.
patent: 6214183 (2001-04-01), Maishev et al.
patent: 6281072 (2001-08-01), Li et al.
patent: 6291341 (2001-09-01), Sharan et al.
patent: 6309972 (2001-10-01), Pio
patent: 6310341 (2001-10-01), Todokoro et al.
patent: 6462333 (2002-10-01), Gersonde
patent: 6499425 (2002-12-01), Sandhu et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6661005 (2003-12-01), Bruenger
patent: 6683005 (2004-01-01), Sandhu et al.
patent: 6720272 (2004-04-01), Sandhu et al.
patent: 6730367 (2004-05-01), Sandhu
patent: 6753538 (2004-06-01), Musil et al.
patent: 6764856 (2004-07-01), Holmes et al.
patent: 6787783 (2004-09-01), Marchman et al.
patent: 6793736 (2004-09-01), Sandhu et al.
patent: 6797337 (2004-09-01), Dando et al.
patent: 6809317 (2004-10-01), Vandervorst
patent: 6811615 (2004-11-01), Sun
patent: 6838114 (2005-01-01), Carpenter et al.
patent: 6838121 (2005-01-01), Weimer
patent: 6845734 (2005-01-01), Carpenter et al.
patent: 6869479 (2005-03-01), Shafeev et al.
patent: 6897907 (2005-05-01), Morimitsu
patent: 6911832 (2005-06-01), Kolachina et al.
patent: 7113276 (2006-09-01), Higgs et al.
patent: 7122125 (2006-10-01), Deshmukh et al.
patent: 7238294 (2007-07-01), Koops et al.
patent: 7256405 (2007-08-01), Nakasuji et al.
patent: 7262555 (2007-08-01), Rueger et al.
patent: 7303690 (2007-12-01), Amemiya et al.
patent: 7311947 (2007-12-01), Dando et al.
patent: 7452477 (2008-11-01), Koops et al.
patent: 7569484 (2009-08-01), Rueger et al.
patent: 7791055 (2010-09-01), Williamson et al.
patent: 7791071 (2010-09-01), Rueger et al.
patent: 2002/0173124 (2002-11-01), Joo
patent: 2002/0182542 (2002-12-01), Choi et al.
patent: 2003/0047691 (2003-03-01), Musil et al.
patent: 2003/0170389 (2003-09-01), Sandhu
patent: 2003/0201391 (2003-10-01), Shinada et al.
patent: 2004/0036398 (2004-02-01), Jin
patent: 2004/0048398 (2004-03-01), Liang et al.
patent: 2004/0091638 (2004-05-01), Haight et al.
patent: 2004/0097076 (2004-05-01), Iyer et al.
patent: 2004/0113097 (2004-06-01), Marchman et al.
patent: 2004/0124348 (2004-07-01), Utz et al.
patent: 2004/0140437 (2004-07-01), Bukofsky et al.
patent: 2004/0151991 (2004-08-01), Stewart et al.
patent: 2005/0078462 (2005-04-01), Dando et al.
patent: 2005/0087514 (2005-04-01), Koops et al.
patent: 2005/0212092 (2005-09-01), Nishizawa
patent: 2005/0253093 (2005-11-01), Gorski et al.
patent: 2005/0266168 (2005-12-01), Poullos
patent: 2006/0134920 (2006-06-01), Liang
patent: 2006/0147814 (2006-07-01), Liang
patent: 2006/0154477 (2006-07-01), Geng et al.
patent: 2006/0183055 (2006-08-01), O'Neill et al.
patent: 2006/0201911 (2006-09-01), Edelberg et al.
patent: 2006/0228634 (2006-10-01), Bret et al.
patent: 2006/0288937 (2006-12-01), Dando et al.
patent: 2006/0289969 (2006-12-01), Dando et al.
patent: 2007/0158303 (2007-07-01), Nasser-Ghodsi et al.
patent: 2007/0158304 (2007-07-01), Nasser-Ghodsi et al.
patent: 2007/0228002 (2007-10-01), Geng et al.
patent: 2007/0228296 (2007-10-01), Mouttet
patent: 2007/0257212 (2007-11-01), Mouttet
patent: 2007/0278180 (2007-12-01), Williamson et al.
patent: 2008/0006786 (2008-01-01), Williamson et al.
patent: 2008/0009140 (2008-01-01), Williamson et al.
patent: 2008/0038863 (2008-02-01), Rueger et al.
patent: 2008/0038894 (2008-02-01), Rueger et al.
patent: 2008/0038928 (2008-02-01), Rueger et al.
patent: 2008/0038933 (2008-02-01), Rueger et al.
patent: 2009/0288603 (2009-11-01), Rueger et al.
patent: 0756318 (1997-01-01), None
patent: 1363164 (2003-11-01), None
patent: 09064030 (1997-03-01), None
patent: 2004-257845 (2004-09-01), None
patent: WO-2008008156 (2008-01-01), None
patent: WO-2008008156 (2008-01-01), None
patent: WO-2008008157 (2008-01-01), None
patent: WO-2008008157 (2008-01-01), None
patent: WO-2008008159 (2008-01-01), None
patent: WO-2008008159 (2008-01-01), None
patent: WO-2008021363 (2008-02-01), None
patent: WO-2008021363 (2008-02-01), None
“Search Report”, International Application No. PCT/US2007/014452, 5.
“Written Opinion”, International Application No. PCT/US2007/014452, 8.
Abramo, M. , et al., “Gas assisted etching: an advanced technique for focused ion beam device modification”,Proceedings of the International Symposium for Testing Failure Analysis, (Nov. 13, 1994),439-446 pgs.
Abramo, M. T., et al., “The application of advanced techniques for complex focused-ion-beam device modification”,Reliability of electron devices, failure physics and analysis, 1996. Proceedings of the 7th europeon symposiumon Oct. 8-11, 1996, Piscataway, NJ USA,IEEE, (Oct. 8, 1996),1775-1778 pgs.
Fujioka, H. , et al., “Measurements of the energy dependence of electron beam assisted etching of,and deposition on, silica”,Journal of Physics D. Applied Physics, IOP Publishing, Bristol, GB, vol. 23, No. 2, (Feb. 14, 1990),266-268 pgs.
Liao, J. Y., et al., “Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure ana
Arrington Justin R.
Sandhu Gurtej S.
Williamson Mark J.
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Vinh Lan
LandOfFree
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