Electron image projection masks

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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A61K 2702

Patent

active

041374584

ABSTRACT:
An electron image projection mask consisting of an optical mask comprising a transparent substrate, bearing an opaque mask pattern disposed on the substrate, a transparent coating extending over the mask pattern and the areas of the substrate exposed through the apertures in the opaque mask pattern, and a metal image extending over the transparent coating. The metal image has a pattern corresponding to the apertures in the opaque mask pattern, the optical density of the metal image being such as to reduce the average light transmission through the apertures in the mask to a value between 25 and 80% of the average light transmission of the apertures in the absence of the metal image. Also, a method of producing the electron image projection mask.

REFERENCES:
patent: 3519873 (1970-07-01), O'Keeffe
patent: 3895234 (1975-07-01), O'Keeffe
patent: 4008402 (1977-02-01), O'keeffe

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