Electron gas hole gas tunneling transistor device

Details Electron gas hole gas tunneling transistor device Electron gas hole gas tunneling transistor device

1987-07-23

1989-05-30

Clawson, Jr., Joseph E.

357 15, 357 22, 357 56, H01K 29161

Patent

active

048355810

ABSTRACT:
Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.

REFERENCES:
patent: 4538165 (1985-08-01), Chang et al.
patent: 4686550 (1987-08-01), Capasso et al.
patent: 4748484 (1988-05-01), Takakuwa et al.
H. Ohno et al., "Double Heterostructure Gn 0.47 In 0.53 Aa MESFETs by MBE*," IEEE Elec. Dev. Lett., vol. EDL-1, #8, Aug. 1980, pp. 154-155.

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