Electron emitting device with diamond

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

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Details

257200, 257485, 257 77, 257508, 313346R, 313446, 313499, 437176, 437177, 423446, H01L 29161

Patent

active

052025713

ABSTRACT:
An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.

REFERENCES:
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patent: 4303930 (1981-12-01), Van Gorkam et al.
patent: 4833507 (1989-05-01), Shimizu et al.
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5002899 (1991-03-01), Geis et al.
patent: 5031015 (1991-07-01), Miyawaki

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