Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1991-07-03
1993-04-13
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257200, 257485, 257 77, 257508, 313346R, 313446, 313499, 437176, 437177, 423446, H01L 29161
Patent
active
052025713
ABSTRACT:
An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.
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patent: 5031015 (1991-07-01), Miyawaki
Hirabayashi Keiji
Kurihara Noriko
Okunuki Masahiko
Tsukamoto Takeo
Watanabe Nobuo
Canon Kabushiki Kaisha
Mintel William
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