Electron emitting device having a polycrystalline silicon resist

Details Electron emitting device having a polycrystalline silicon resist Electron emitting device having a polycrystalline silicon resist

1995-04-06

1996-09-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313346R, 313311, H01J 1924, H01L 2912

Patent

active

055593429

ABSTRACT:
An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.

REFERENCES:
patent: 3581151 (1971-05-01), Boyle et al.
patent: 3611077 (1971-10-01), Smith
patent: 3806372 (1974-04-01), Sommer
patent: 3814968 (1974-06-01), Nathanson et al.
patent: 4303930 (1981-12-01), Van Garkom et al.
patent: 4683399 (1987-07-01), Soclof
"Electrical Conduction and Electron Emissionof Discontinuous Thin Films" by G. Dittmer; An International Journal on Their Science and Technology; vol. 9 (1972); pp. 317-328.
"Interaction of Al layers with Polgingstalline Si"; K. Nakamura et al.; Journal of Applied Physics, vol. 46, No. 11; Nov. 1975, pp. 4678-4684.

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