Electron emitting device, electron emitting apparatus and electr

Details Electron emitting device, electron emitting apparatus and electr Electron emitting device, electron emitting apparatus and electr

1993-04-20

1994-02-08

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 313346R, 313366, H01L 29161, H01L 29205, H01L 29225, H01J 114

Patent

active

052850790

ABSTRACT:
An electron emitting device is provided for use in a flat display, an electron beam drawing apparatus, a CRT display and so on. The electron emitting device comprises a first layer having a first bandgap, a second layer formed on the first layer and having the first bandgap, a third layer formed on the second layer and having a second bandgap, which is narrower than the first bandgap, and a fourth layer formed on the third layer and having an electron emitting surface. According to this structure, a high electron emission efficiency can be obtained.

REFERENCES:
patent: 4000503 (1976-12-01), Matare
patent: 4370797 (1983-02-01), van Gorkom et al.
patent: 5031015 (1991-07-01), Miyawaki
Schade et al, `Novel GaAs-(AlGa)As Cold Cathode . . . `, Appl Phys Lttr, vol. 20 #10, 15 May 1972, pp. 385-387.
Kan et al, `New Structure . . . Cold Cathode`, Tromson ED, vol. ED-26 #11, Nov. 1979, pp. 1759-1766.
Milnes et al, `Heterojunction Photocathode Concepts`, Appl Phys Lttr, vol. 19 #10, 15 Nov. 1971, pp. 383-385.
Clark et al, `. . . heterojunction Structure . . . of cathode contact . . . ` Conference of Inst Phys, 1974, pp. 373-376.

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