Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-08-22
2006-08-22
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C313S310000, C313S311000
Reexamination Certificate
active
07095040
ABSTRACT:
An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
REFERENCES:
patent: 3184659 (1965-05-01), Cohen
patent: 3447043 (1969-05-01), Wallace
patent: 3535598 (1970-10-01), Feist
patent: 5202605 (1993-04-01), Kaneko et al.
patent: 5569974 (1996-10-01), Morikawa et al.
patent: 5702281 (1997-12-01), Huang et al.
patent: 5814924 (1998-09-01), Komatsu
patent: 6166487 (2000-12-01), Negishi et al.
patent: 6285123 (2001-09-01), Yamada et al.
patent: 2003/0048745 (2003-03-01), Yoshikawa et al.
patent: 0 863 533 (1998-09-01), None
patent: 02-172127 (1990-07-01), None
patent: 03-046729 (1991-02-01), None
patent: 3-225721 (1991-10-01), None
patent: 06-068785 (1994-03-01), None
patent: 7-65710 (1995-03-01), None
patent: 08-236010 (1996-09-01), None
patent: 52-004163 (1997-01-01), None
patent: 10-177838 (1998-06-01), None
patent: 10-312738 (1998-11-01), None
patent: 10-312741 (1998-11-01), None
patent: 11-67065 (1999-03-01), None
patent: 11-167860 (1999-06-01), None
patent: 2000-156147 (2000-06-01), None
Webster's unabriged dictionary of the English language, 1989 ed., p. 303.
Chuman Takashi
Hata Takuya
Iwasaki Shingo
Negishi Nobuyasu
Ogasawara Kiyohide
Drinker Biddle & Reath LLP
Jackson Jerome
Pioneer Corporation
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