Electron-emitting device and method of manufacturing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C313S310000, C313S311000

Reexamination Certificate

active

07095040

ABSTRACT:
An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.

REFERENCES:
patent: 3184659 (1965-05-01), Cohen
patent: 3447043 (1969-05-01), Wallace
patent: 3535598 (1970-10-01), Feist
patent: 5202605 (1993-04-01), Kaneko et al.
patent: 5569974 (1996-10-01), Morikawa et al.
patent: 5702281 (1997-12-01), Huang et al.
patent: 5814924 (1998-09-01), Komatsu
patent: 6166487 (2000-12-01), Negishi et al.
patent: 6285123 (2001-09-01), Yamada et al.
patent: 2003/0048745 (2003-03-01), Yoshikawa et al.
patent: 0 863 533 (1998-09-01), None
patent: 02-172127 (1990-07-01), None
patent: 03-046729 (1991-02-01), None
patent: 3-225721 (1991-10-01), None
patent: 06-068785 (1994-03-01), None
patent: 7-65710 (1995-03-01), None
patent: 08-236010 (1996-09-01), None
patent: 52-004163 (1997-01-01), None
patent: 10-177838 (1998-06-01), None
patent: 10-312738 (1998-11-01), None
patent: 10-312741 (1998-11-01), None
patent: 11-67065 (1999-03-01), None
patent: 11-167860 (1999-06-01), None
patent: 2000-156147 (2000-06-01), None
Webster's unabriged dictionary of the English language, 1989 ed., p. 303.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electron-emitting device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron-emitting device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron-emitting device and method of manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3677367

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.