Electron emitting device and method of making the same

Details Electron emitting device and method of making the same Electron emitting device and method of making the same

1975-03-24

1977-04-19

Chatmon, Jr., Saxfield

Electric lamp and discharge devices

Electrode and shield structures

Cathodes containing and/or coated with electron emissive...

29572, 313 94, 313103R, 357 30, 427 77, H01J 114, H01J 1906

Patent

active

040190820

ABSTRACT:
A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

REFERENCES:
patent: 3478213 (1969-11-01), Simon et al.
patent: 3669735 (1972-06-01), Fisher
patent: 3696262 (1972-10-01), Antypas
patent: 3868523 (1975-02-01), Klopfer et al.
patent: 3889143 (1975-06-01), Gowers
patent: 3901745 (1975-08-01), Pion

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