Electron emitters with dopant gradient

Electric lamp and discharge devices – Electrode and shield structures – Point source cathodes

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C313S336000, C313S309000, C313S495000, C313S308000, C313S351000

Reexamination Certificate

active

06825596

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to field emitter technology, and more particularly, to electron emitters and method for forming them.
BACKGROUND OF THE INVENTION
Cathode ray tube (CRT) displays, such as those commonly used in desk-top computer screens, function as a result of a scanning electron beam from an electron gun, impinging on phosphors on a relatively distant screen. The electrons increase the energy level of the phosphors. The phosphors release energy imparted to them from the bombarding electrons, thereby emitting photons, which photons are transmitted through the glass screen of the display to the viewer.
Flat panel displays have become increasingly important in appliances requiring lightweight portable screens. Currently, such screens use electroluminescent, liquid crystal, or plasma technology. A promising technology is the use of a matrix addressable array of cold cathode emission devices to excite phosphor on a screen.
In U.S. Pat. No. 3,875,442, entitled “Display Panel,” Wasa et. al. disclose a display panel comprising a transparent gas-tight envelope, two main planar electrodes which are arranged within the gas-tight envelope parallel with each other, and a cathodeluminescent panel. One of the two main electrodes is a cold cathode, and the other is a low potential anode, gate, or grid. The cathode luminescent panel may consist of a transparent glass plate, a transparent electrode formed on the transparent glass plate, and a phosphor layer coated on the transparent electrode. The phosphor layer is made of, for example, zinc oxide which can be excited with low energy electrons.
Spindt, et. al. discuss field emission cathode structures in U.S. Pat. Nos. 3,665,241, and 3,755,704, and 3,812,559, and 4,874,981. To produce the desired field emission, a potential source is provided with its positive terminal connected to the gate, or grid, and its negative terminal connected to the emitter electrode (cathode conductor substrate). The potential source may be made variable for the purpose of controlling the electron emission current. Upon application of a potential between the electrodes, an electric field is established between the emitter tips and the grid, thus causing electrons to be emitted from the cathode tips through the holes in the grid electrode.
An array of points in registry with holes in grids are adaptable to the production of gate emission sources subdivided into areas containing one or more tips from which areas of emission can be drawn separately by the application of the appropriate potentials thereto.
There are several methods by which to form the electron emission tips. Examples of such methods are presented in U.S. Pat. No. 3,970,887 entitled, “Micro-structure Field Emission Electron Source.”
SUMMARY OF THE INVENTION
The performance of a field emission display is a function of a number of factors, including emitter tip or edge sharpness.
In the process of the present invention, a dopant material which effects the oxidation rate or the etch rate of silicon, is diffused into a silicon substrate or film. “Stalks” or “pillars” are then etched, and the dopant differential is used to produce a sharpened tip. Alternatively, “fins” or “hedges” may be etched, and the dopant differential used to produce a sharpened edge.
One of the advantages of the present invention is the manufacturing control, and available process window for fabricating emitters, particularly if a high aspect ratio is desired. Another advantage of the present invention is its scalability to large areas.


REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3816194 (1974-06-01), Kroger et al.
patent: 3875442 (1975-04-01), Wasa et al.
patent: 3894332 (1975-07-01), Nathanson et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 4301429 (1981-11-01), Goldman et al.
patent: 4400866 (1983-08-01), Yeh et al.
patent: 4420872 (1983-12-01), Solo de Zaldivar
patent: 4718973 (1988-01-01), Abraham et al.
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4874981 (1989-10-01), Spindt
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 5063327 (1991-11-01), Brodie et al.
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5138220 (1992-08-01), Kirkpatrick
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5269877 (1993-12-01), Bol
patent: 5315126 (1994-05-01), Field
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5378658 (1995-01-01), Toyoda et al.
patent: 5431777 (1995-07-01), Austin et al.
patent: 5469014 (1995-11-01), Itoh et al.
patent: 5532177 (1996-07-01), Cathey
patent: 5552613 (1996-09-01), Nishibayashi et al.
patent: 5583393 (1996-12-01), Jones
patent: 5662815 (1997-09-01), Kim
patent: 5703380 (1997-12-01), Potter
patent: 5786659 (1998-07-01), Takagi et al.
patent: 6031250 (2000-02-01), Brandes et al.
patent: 6049089 (2000-04-01), Cathey
patent: 6091188 (2000-07-01), Tomihari et al.
patent: 57-43412 (1982-03-01), None
patent: 3-238729 (1991-10-01), None
G. W. Jones et al., “Fabrication of Silicon Point, Wedge, and Trench FEAs” Technical Digest of IVMC 91, 1991 pp 34,35.*
Integrated Electronics : Analog and Digital Circuits and Systemsby J. Millman et al. pp 204-205, 1972 (no month).*
Jones et al., Fabrication of Silicon Point, Wedge, and Trench FEAs, Technical Digest of IVMC 91, Nagahama, pp 34, 35, 1991.*
Hunt, Charles E., Johann T. Trujillo, William J. Orvis, “Structure and Electrical Characteristics of Silicon Field-Emission Microelectronic Devices,” IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Marcus, R. B., T. S. Ravi, T. Gmitter, H. H. Busta, J. T. Niccum, K. K. Chin, and D. Liu, “Atomically Sharp Silicon and Metal Field Emitters,” IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Wolf, Stanley, Silicon Processing for the VLSI ERA, vol. 2: Process Integration, Lattice Press, Sunset Beach, California, pp. 20-27, 1990, (no month).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electron emitters with dopant gradient does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron emitters with dopant gradient, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron emitters with dopant gradient will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3293468

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.