Electron emitter structure and associated method of...

Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C313S310000, C313S336000, C313S351000

Reexamination Certificate

active

08076832

ABSTRACT:
A method of forming an electron emitter structure for use in a field emission display, or as a field emission backlight for an LCD display is provided. The electron emitter structure is formed by depositing mask elements onto an laminar Al substrate, and etching the Al substrate chemically through gaps between the mask elements, such that a spikes are formed on the substrate. These spikes are then covered with an electron emitter material. The spikes can be formed with a desired pitch/height ratio.

REFERENCES:
patent: 3921022 (1975-11-01), Levine
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5290610 (1994-03-01), Kane et al.
patent: 5663611 (1997-09-01), Seats et al.
patent: 5766829 (1998-06-01), Cathey, Jr. et al.
patent: 5773920 (1998-06-01), Shaw et al.
patent: 6133057 (2000-10-01), Derraa
patent: 6822379 (2004-11-01), McClelland et al.
patent: 6825596 (2004-11-01), Cathey
patent: 7345415 (2008-03-01), Chen et al.
patent: 2001/0040429 (2001-11-01), Zhang et al.
patent: 2002/0053869 (2002-05-01), Ahn et al.
patent: 2008/0290777 (2008-11-01), Okita
patent: 0 789 382 (1997-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electron emitter structure and associated method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron emitter structure and associated method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron emitter structure and associated method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4314883

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.