Electron emitter and method of fabrication

Details Electron emitter and method of fabrication Electron emitter and method of fabrication

1975-04-30

1976-05-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148175, 148 15, 148 335, 252 623GA, 357 29, 313 95, 156 17, H01L 736, H01L 738, H01L 754

Patent

active

039590372

ABSTRACT:
Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting layer and as an intermediate construction layer, and the GaAlAs layers serve as a passivating window and as an etch stop layer.

REFERENCES:
patent: 3478213 (1969-11-01), Simon et al.
patent: 3672992 (1972-06-01), Schaefer
patent: 3762968 (1973-10-01), Kressel et al.
patent: 3862859 (1975-01-01), Ettenberg et al.
patent: 3901744 (1975-08-01), Bolger et al.
patent: 3901745 (1975-08-01), Pion
patent: 3914136 (1975-10-01), Kressel

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