Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1986-09-02
1988-05-24
Kittle, John E.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, 430321, 430324, 430325, 430942, 2504922, 2504923, 2505031, G03F 900
Patent
active
047465875
ABSTRACT:
The mask part 41 includes a substrate 1, a patterning means 40 and a photoemissive layer 6. The patterning means 40 includes a mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4. Ultraviolet radiation 56 is patterned by patterning means 40 before effecting electron emission 60 from the photoemissive layer 6. There is electron emission from over the apertures 3 and the masking areas 2 as the masking areas are partially transparent to incident ultraviolet radiation. The ultraviolet transmitted by the apertures and the masking areas is modified in intensity dependent on the thickness R of the modifying layer. The resuting electron emission 60 is in a patterned beam which forms a proximity effect corrected electron image of the mask pattern in the electron sensitive resist layer 63. The masking areas 2 of chromium and the modifying layer 4 of resist may be made by modifications of known methods of chromium deposition and resist exposure and development. The use of the mask in the manufacture of a solid state device allows a single exposure of a resist layer 63 to form a proximity effect corrected image of the mask pattern 2, 3 in the resist layer 63.
REFERENCES:
patent: 4137458 (1979-01-01), King et al.
patent: 4377627 (1983-03-01), Vinton
patent: 4426584 (1984-01-01), Bohlen et al.
Dees Jos,e G.
Kittle John E.
Mayer Robert T.
U.S. Philips Corporation
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