Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1993-07-21
1994-04-19
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257435, 257462, 359 71, 313465, 313501, 313524, 250214VT, H01L 2714, H01L 3100, H01J 2912
Patent
active
053048156
ABSTRACT:
An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.
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"Lexikon Elektronik"; Herausgegeben vaon Dr.-Ing. Hans-Dieter Junge; Physik Verlag; pp. 215-219.
Okunuki Masahiko
Shimizu Akira
Shimoda Isamu
Sugata Masao
Suzuki Akira
Canon Kabushiki Kaisha
Jackson Jerome
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