Electron emission device using thick-film insulating structure

Details Electron emission device using thick-film insulating structure Electron emission device using thick-film insulating structure

2005-08-24

2010-02-23

Roy, Sikha (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Vacuum-type tube

C313S310000, C313S496000, C445S024000

Reexamination Certificate

active

07667380

ABSTRACT:
An electron emission device includes first and second substrates facing each other, cathode electrodes formed on the first substrate, and electron emission regions formed on the cathode electrodes. An insulating layer is formed on the cathode electrodes with opening portions exposing the electron emission regions. Gate electrodes are formed on the insulating layer with opening portions corresponding to the opening portions of the insulating layer. Phosphor layers are formed on the second substrate. At least one anode electrode is formed on a surface of the phosphor layers. The cathode and the gate electrodes are formed by thin filming, and the insulating layer is formed by thick filming.

REFERENCES:
patent: 5228878 (1993-07-01), Komatsu
patent: 5719477 (1998-02-01), Tomihari
patent: 5786656 (1998-07-01), Hasegawa et al.
patent: 5831387 (1998-11-01), Kaneko et al.
patent: 5965977 (1999-10-01), Makishima
patent: 6333598 (2001-12-01), Hsu et al.
patent: 6384520 (2002-05-01), Russ
patent: 6437503 (2002-08-01), Konuma
patent: 2002/0030436 (2002-03-01), Ichikawa
patent: 2002/0050776 (2002-05-01), Kubota et al.
patent: 2003/0001490 (2003-01-01), Yamamoto et al.
patent: 2003/0015958 (2003-01-01), Saito et al.
patent: 2003/0102797 (2003-06-01), Kajiwara
patent: 2003/0214218 (2003-11-01), Itoh et al.
patent: 2004/0027051 (2004-02-01), Moradi et al.
patent: 2004/0080260 (2004-04-01), Park et al.
patent: 2004/0130510 (2004-07-01), Konishi et al.
patent: 2005/0035701 (2005-02-01), Choi et al.
patent: 1462464 (2003-12-01), None
patent: 1 130 617 (2001-09-01), None
patent: 1 429 363 (2004-06-01), None
patent: WO 2005/029528 (2005-03-01), None
European Office action dated Oct. 4, 2007, for EP 05 107 880.6, in the name of Samsung SDI Co., Ltd.
European Search Report dated Apr. 4, 2007, for EP 05107880.6, in the name of Samsung SDI Co., Ltd.

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