Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2007-09-11
2007-09-11
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C257S077000, C257S084000, C313S309000, C313S336000, C315S005000, C315S169100, C315S169300
Reexamination Certificate
active
10483114
ABSTRACT:
The invention provides an electron beam device1comprising at least one field emission cathode3and at least one extracting electrode5, whereby the field emission cathode5comprises a p-type semiconductor region7connected to an emitter tip9made of a semiconductor material, an n-type semiconductor region11forming a pn-diode junction13with the p-type semiconductor region7a first electric contact15on the p-type semiconductor region7and a second electric contact17on the n-type semiconductor region11.The p-type semiconductor region7prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region7by the pn-diode junction13.This way, the field emission cathode3can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting, the voltage between emitter tip9and extracting electrode5which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.
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Adamec Pavel
Winkler Dieter
Erdem Fazli
ICT Integrated Circuit Testing Gesellschaft, fur Halbleiterpruft
Patterson & Sheridan LLP
Purvis Sue A.
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